MPSA92 / mmbta92 / pzta92 n discrete power & signal technologies pnp high voltage amplifier this device is designed for high voltage driver applications. sourced from process 76. mmbta92 MPSA92 pzta92 absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. symbol parameter value units v ceo collector-emitter voltage 300 v v cbo collector-bas e voltage 300 v v ebo emitter-base voltage 5.0 v i c collector current - continuous 100 ma t j , t stg operating and storage j unction temperature range -55 to +150 c thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units MPSA92 *mmbta92 **pzta92 p d total device dissipation derate above 25 c 625 5.0 350 2.8 1,000 8.0 mw mw/ c r q jc thermal resistanc e, j unction to case 83.3 c/w r q ja thermal resistanc e, j unction to ambient 200 357 125 c/w c b e to-92 c b e sot-23 mark: 2d b c c sot-223 e * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." ** device mounted on fr-4 pcb 36 mm x 18 mm x 1.5 mm; mounting pad for the collector lead min. 6 cm 2 .
MPSA92 / mmbta92 / pzta92 electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units v (br)ceo collector-emitter breakdown voltage* i c = 1.0 ma, i b = 0 300 v v (br)cbo collector-bas e breakdown voltage i c = 100 m a, i e = 0 300 v v (br) ebo emitter-base breakdown voltage i e = 100 m a, i c = 0 5.0 v i cbo collector-cutoff current v cb = 200 v, i e = 0 0.25 m a i ebo emitter-cutoff current v eb = 3.0 v, i c = 0 0.1 m a small signal characteristics * pulse test: pulse width 300 m s, duty cycle 2.0% on characteristics* h fe dc current gain i c = 1.0 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 30 ma, v ce = 10 v 25 40 25 v ce( sat ) collector-emitter saturation voltage i c = 20 ma, i b = 2.0 ma 0.5 v v be( sat ) base-emitter saturation voltage i c = 20 ma, i b = 2.0 ma 0.9 v f t current gain - bandwidth product i c = 10 ma, v ce = 20 v, f = 100 mhz 50 mhz c cb collector-bas e capacitance v cb = 20 v, i e = 0, f = 1.0 mhz 6.0 pf spice model pnp (is=218.9f xti=3 eg=1.11 vaf=100 bf=99 ne=1.307 ise=218.9f ikf=.2016 xtb=1.5 br=24.67 nc=2 isc=0 ikr=0 rc=7 cjc=19.88p mjc=.4876 vjc=.75 fc=.5 cje=81.49p mje=.3493 vje=.75 tr=516.9p tf=1.395n itf=1.5 vtf=22 xtf=270 rb=10) typical characteristics pnp high voltage amplifier (continued) collector-emitter saturation voltage vs collector current 0.1 1 10 100 0.2 0.4 0.6 i - collector current (ma) v - collector-emitter voltage (v) cesat c b b = 10 125 oc - 40 oc 25 c dc current gain vs collector current p6 0.1 1 10 100 0 20 40 60 80 100 120 140 i - collector current (ma) h - dc current gain fe c v = 5v ce 125 oc - 40 oc 25 c
MPSA92 / mmbta92 / pzta92 pnp high voltage amplifier (continued) typical characteristics (continued) base-emitter saturation voltage vs collector current 110100 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 i - collector current (ma) v - base- em it ter vo ltage (v) besat c b b = 10 125 oc - 40 oc 25 c base-emitter on voltage vs collector current p6 1 10 100 0.2 0.4 0.6 0.8 1 i - collector current (ma) v - base-emitter on voltage (v) be(on) 125 oc - 40 oc 25 c c v = 5v ce collector-cutoff current vs ambient temperature p6 25 50 75 100 125 150 0.1 1 10 100 t - ambient temperature ( c) i - collector current (na) a v = 150v cb o cbo power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 0.25 0.5 0.75 1 temperature ( c) p - power dissipation (w) d o sot-223 to-92 sot-23 junction capacitance vs reverse bias voltage p6 0.1 1 10 100 0.1 1 10 v - reverse voltage (v) junction capacitance (pf) c f = 1.0 mhz ib c ob r gain bandwidth product vs collector current p76 1102050100 0 20 40 60 80 100 i - collector current (ma) f - gain bandwidth product (mhz) c t v = 50v ce v = 15v ce
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